CPC C23C 14/354 (2013.01) [C23C 14/04 (2013.01); H01J 37/3447 (2013.01); G02B 27/30 (2013.01)] | 15 Claims |
1. An apparatus for performing a sputtering process on a substrate, the apparatus comprising:
a processing chamber configured to accommodate a substrate and having a substrate support on which the substrate is placed;
a target, having a surface facing the substrate placed on the substrate support, for emitting target particles to be adhered to the substrate by plasma formed in the processing chamber;
a magnet, provided on a rear surface of the target when viewed from the substrate support side, for adjusting a state of the plasma on the surface of the target;
a magnet moving mechanism for repeatedly moving the magnet between a position on one side and a position on the other side set across a center portion on the rear surface of the target; and
a collimator provided between the substrate support and the target, the collimator including two regulating plates, disposed apart from each other and facing each other, for limiting an incident angle at which the target particles emitted from the target are incident on the substrate placed on the substrate support, and an arrangement position adjustment mechanism for adjusting positions at which the two regulating plates are disposed according to the movement of the magnet,
wherein positions of the regulating plates with respect to the magnet are maintained when the magnet moves between the position on one side and the position on the other side,
wherein the arrangement position adjustment mechanism is configured as a regulating plate movement mechanism for moving the two regulating plates following the movement of the magnet, and
wherein the regulating plate movement mechanism is configured to move the two regulating plates in the moving direction of the magnet.
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