US 11,851,749 B2
Semiconductor device, method and machine of manufacture
Jen-Chun Wang, Chiayi (TW); Ya-Lien Lee, Baoshan Township (TW); Chih-Chien Chi, Hsinchu (TW); and Hung-Wen Su, Jhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 27, 2022, as Appl. No. 17/826,809.
Application 17/826,809 is a division of application No. 16/509,775, filed on Jul. 12, 2019, granted, now 11,345,991.
Claims priority of provisional application 62/737,358, filed on Sep. 27, 2018.
Prior Publication US 2022/0290291 A1, Sep. 15, 2022
Int. Cl. C23C 14/35 (2006.01); H01L 21/768 (2006.01); H01J 37/34 (2006.01); C23C 14/00 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 14/06 (2006.01); C23C 14/22 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); C23C 14/34 (2006.01); H01L 21/285 (2006.01); C23C 14/04 (2006.01); C23C 16/04 (2006.01); H01L 21/3205 (2006.01); H01L 23/532 (2006.01)
CPC C23C 14/35 (2013.01) [C23C 14/0036 (2013.01); C23C 14/046 (2013.01); C23C 14/0641 (2013.01); C23C 14/225 (2013.01); C23C 14/3492 (2013.01); C23C 14/358 (2013.01); C23C 16/045 (2013.01); C23C 16/34 (2013.01); C23C 16/45525 (2013.01); H01J 37/3405 (2013.01); H01J 37/3458 (2013.01); H01L 21/02183 (2013.01); H01L 21/02266 (2013.01); H01L 21/2855 (2013.01); H01L 21/67253 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/28568 (2013.01); H01L 21/32051 (2013.01); H01L 23/53238 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A deposition system comprising:
a first deposition chamber;
a target within the first deposition chamber;
a mounting platform within the first deposition chamber;
a first coil within the first deposition chamber;
a first power source connected to the first coil;
a second coil within the first deposition chamber;
a second power source connected to the second coil;
a third coil within the first deposition chamber;
a third power source connected to the third coil, wherein the first power source, the second power source and the third power source are each different; and
a second deposition chamber, the second deposition chamber connected to a second precursor delivery system, the second deposition chamber being an atomic layer deposition chamber.