US 11,851,318 B2
MEMS device and method for making the same
Yi-Chuan Teng, Hsinchu (TW); Ching-Kai Shen, Hsinchu (TW); Jung-Kuo Tu, Hsinchu (TW); Wei-Cheng Shen, Hsinchu (TW); Xin-Hua Huang, Hsinchu (TW); and Wei-Chu Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Apr. 22, 2021, as Appl. No. 17/237,575.
Prior Publication US 2022/0340407 A1, Oct. 27, 2022
Int. Cl. B81B 3/00 (2006.01); B81C 1/00 (2006.01)
CPC B81B 3/0005 (2013.01) [B81B 3/001 (2013.01); B81C 1/00968 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81B 2203/0392 (2013.01); B81B 2203/04 (2013.01); B81C 2201/112 (2013.01); B81C 2203/036 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A microelectromechanical system (MEMS) device comprising:
a substrate;
a dielectric layer being formed on the substrate, and being formed with a cavity that is defined by a cavity-defining wall;
an electrode formed in the dielectric layer;
a surface modification layer covering the cavity-defining wall, the surface modification layer having a plurality of hydrophobic end groups;
a membrane connected to the dielectric layer and sealing the cavity, the membrane being movable toward or away from the electrode;
a venting passage penetrating the membrane and the dielectric layer and being in spatial communication with the cavity; and
a seal sealing the venting passage so as to hermetically isolate the cavity from the outside environment.