US 12,503,769 B2
Semiconductor processing tool and methods of operation
Che Wei Yang, New Taipei (TW); Chih Cheng Shih, Kaohsiung (TW); Kuo Liang Lu, Hsinchu (TW); Yu Jiang, Taipei (TW); Sheng-Chan Li, Tainan (TW); Kuo-Ming Wu, Zhubei (TW); Sheng-Chau Chen, Tainan (TW); Chung-Yi Yu, Hsin-Chu (TW); and Cheng-Yuan Tsai, Chu-Pei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 8, 2023, as Appl. No. 18/166,196.
Claims priority of provisional application 63/375,471, filed on Sep. 13, 2022.
Prior Publication US 2024/0084455 A1, Mar. 14, 2024
Int. Cl. C23C 16/50 (2006.01); C23C 16/40 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01)
CPC C23C 16/50 (2013.01) [C23C 16/405 (2013.01); C23C 16/56 (2013.01); H01J 37/32541 (2013.01); H01J 37/32568 (2013.01); H01J 2237/3321 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
receiving a stack of two or more semiconductor substrates onto a semiconductor substrate support component that is below, and separated from, an insulator component,
generating an approximately lateral electromagnetic field using an electrode component including a protrusion that extends towards the stack of two or more semiconductor substrates,
wherein the protrusion extends into a region vertically above a top surface of the semiconductor substrate support component and vertically below a bottom surface of the insulator component, and
wherein the approximately lateral electromagnetic field is between a tip of the protrusion and the stack of two or more semiconductor substrates; and
forming a supporting fill material in a region between beveled edges of the stack of two or more semiconductor substrates using the approximately lateral electromagnetic field.