US 11,844,219 B2
Semiconductor device and method of manufacturing the same
Yuta Saito, Yokkaichi Mie (JP); Shinji Mori, Nagoya Aichi (JP); Keiichi Sawa, Yokkaichi Mie (JP); Kazuhisa Matsuda, Yokkaichi Mie (JP); Kazuhiro Matsuo, Kuwana Mie (JP); and Hiroyuki Yamashita, Yokkaichi Mie (JP)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Jun. 30, 2022, as Appl. No. 17/854,072.
Application 16/993,627 is a division of application No. 16/285,068, filed on Feb. 25, 2019, granted, now 10,777,573, issued on Sep. 15, 2020.
Application 17/854,072 is a continuation of application No. 16/993,627, filed on Aug. 14, 2020, granted, now 11,404,437.
Claims priority of application No. 2018-103578 (JP), filed on May 30, 2018.
Prior Publication US 2022/0336493 A1, Oct. 20, 2022
Int. Cl. H10B 43/27 (2023.01); H01L 21/324 (2006.01); H01L 23/532 (2006.01); H01L 21/28 (2006.01)
CPC H10B 43/27 (2023.02) [H01L 21/324 (2013.01); H01L 23/53295 (2013.01); H01L 29/40117 (2019.08)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor layer containing metal atoms;
a charge storage layer provided on a surface of the semiconductor layer via a first insulating film; and
an electrode layer provided on a surface of the charge storage layer via a second insulating film, wherein
an averaged particle diameter of crystal grains in the semiconductor layer is equal to or greater than 2,000 nanometers (nm), and
the semiconductor layer is a polysilicon layer.