US 11,844,207 B2
Semiconductor device including buried contact and method for manufacturing the same
Jeonil Lee, Suwon-si (KR); Youngjun Kim, Gwangju (KR); and Jinbum Kim, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 20, 2022, as Appl. No. 17/579,919.
Claims priority of application No. 10-2021-0106399 (KR), filed on Aug. 12, 2021.
Prior Publication US 2023/0051597 A1, Feb. 16, 2023
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/315 (2023.02) [H10B 12/0335 (2023.02); H10B 12/37 (2023.02); H10B 12/482 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an active pattern;
a gate structure connected to the active pattern;
a bit line structure connected to the active pattern;
a buried contact connected to the active pattern;
a contact pattern covering the buried contact;
a landing pad connected to the contact pattern; and
a capacitor structure connected to the landing pad,
wherein:
the buried contact includes a first growth portion and a second growth portion spaced apart from each other, and
the landing pad includes an interposition portion between the first growth portion and the second growth portion.