US 11,843,080 B2
Nitride semiconductor light-emitting element
Shuichiro Yamamoto, Ishikawa (JP); Tadaaki Maeda, Ishikawa (JP); and Naoki Shibata, Ishikawa (JP)
Assigned to Nikkiso Co., Ltd., Tokyo (JP)
Appl. No. 16/957,915
Filed by NIKKISO CO., LTD., Tokyo (JP)
PCT Filed Oct. 12, 2018, PCT No. PCT/JP2018/038045
§ 371(c)(1), (2) Date Jun. 25, 2020,
PCT Pub. No. WO2019/130725, PCT Pub. Date Jul. 4, 2019.
Application 16/957,915 is a continuation of application No. PCT/JP2018/038045, filed on Oct. 12, 2018.
Claims priority of application No. 2017-249040 (JP), filed on Dec. 26, 2017.
Prior Publication US 2020/0365779 A1, Nov. 19, 2020
Int. Cl. H01L 33/32 (2010.01); H01L 33/44 (2010.01); H01L 33/56 (2010.01); H01L 33/48 (2010.01)
CPC H01L 33/56 (2013.01) [H01L 33/32 (2013.01); H01L 33/44 (2013.01); H01L 33/486 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A semiconductor light-emitting device, comprising:
a semiconductor light-emitting element having a light output surface that emits ultraviolet light, the light output surface being a top surface of the semiconductor light-emitting element;
a package substrate mounting the semiconductor light-emitting element;
a sealing resin that seals the semiconductor light-emitting element; and
a coat film provided only on the top surface of the semiconductor light-emitting element between the light output surface of the semiconductor light-emitting element and the sealing resin,
wherein the refractive index of the coat film and the refractive index of the sealing resin are smaller than the refractive index of a member constituting the light output surface of the semiconductor light-emitting element, and the refractive index difference between the coat film and the sealing resin is not more than 0.15,
wherein the sealing resin comprises a resin comprising a silicone resin as a main component,
wherein the semiconductor light-emitting element emits deep ultraviolet light at a wavelength of not more than 300 nm,
wherein the transmittance of the ultraviolet light through the coat film is not less than 90%, and the transmittance of the ultraviolet light through the sealing resin is not less than 80%,
wherein the thickness of the coat film is not less than 0.5 μm and not more than 5.0 μm,
wherein coat film comprises a glass film comprising SiO2 as a main component or comprises amorphous SiO2;
wherein the coat film does not contain fluorescent materials; and
wherein the light output surface is a surface of the semiconductor light-emitting element opposite to a side of the semiconductor light-emitting element mounted on the package substrate.