US 11,843,076 B2
Single chip multi band led and application thereof
Yong Hyun Baek, Gyeonggi-do (KR); Ji Hun Kang, Gyeonggi-do (KR); Chae Hon Kim, Gyeonggi-do (KR); Ji Hoon Park, Gyeonggi-do (KR); and So Ra Lee, Gyeonggi-do (KR)
Assigned to Seoul Viosys Co., Ltd., Gyeonggi-do (KR)
Filed by SEOUL VIOSYS CO., LTD., Gyeonggi-do (KR)
Filed on Apr. 3, 2023, as Appl. No. 18/130,063.
Application 18/130,063 is a continuation of application No. 17/328,498, filed on May 24, 2021, granted, now 11,621,370.
Claims priority of provisional application 63/041,201, filed on Jun. 19, 2020.
Prior Publication US 2023/0246122 A1, Aug. 3, 2023
Int. Cl. H01L 33/06 (2010.01); H01L 25/075 (2006.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01); G09G 3/32 (2016.01); G09G 3/20 (2006.01); F21S 6/00 (2006.01); F21Y 115/10 (2016.01); F21W 107/30 (2018.01); F21W 106/00 (2018.01)
CPC H01L 33/06 (2013.01) [G09G 3/2003 (2013.01); G09G 3/32 (2013.01); H01L 25/0753 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/62 (2013.01); F21S 6/003 (2013.01); F21W 2106/00 (2018.01); F21W 2107/30 (2018.01); F21Y 2115/10 (2016.08); G09G 2300/0452 (2013.01); G09G 2320/0666 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An emitting device comprising:
a light emitting diode, the light emitting diode comprising:
an n-type nitride semiconductor layer;
an active layer located on the n-type nitride semiconductor layer; and
a p-type nitride semiconductor layer located on the active layer, wherein the active layer includes a well layer formed of InxAlyGa1-x-yN (0<x<1, 0≤y<1), wherein the light emitting diode emits light that varies color coordinates as a driving current varies.