US 11,843,071 B2
Solar cell, manufacturing method thereof, and photovoltaic module
Kun Yu, Zhejiang (CN); Changming Liu, Zhejiang (CN); and Xinyu Zhang, Zhejiang (CN)
Assigned to Shanghai Jinko Green Energy Enterprise Management CO., LTD., Shanghai (CN); and Zhejiang Jinko Solar CO., LTD., Zhejiang (CN)
Filed by SHANGHAI JINKO GREEN ENERGY ENTERPRISE MANAGEMENT CO., LTD., Shanghai (CN); and ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN)
Filed on Nov. 29, 2022, as Appl. No. 18/071,430.
Application 17/964,190 is a division of application No. 17/459,689, filed on Aug. 27, 2021, granted, now 11,581,454.
Application 18/071,430 is a continuation in part of application No. 17/964,190, filed on Oct. 12, 2022.
Claims priority of application No. 202110895225.8 (CN), filed on Aug. 4, 2021.
Prior Publication US 2023/0088548 A1, Mar. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/0236 (2006.01); H01L 31/0368 (2006.01); H01L 31/18 (2006.01); H01L 31/068 (2012.01)
CPC H01L 31/1868 (2013.01) [H01L 31/02366 (2013.01); H01L 31/03685 (2013.01); H01L 31/068 (2013.01); H01L 31/1824 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a semiconductor substrate, wherein a rear surface of the semiconductor substrate include a first texture structure, the first texture structure has a non-pyramid-shaped microstructure and includes two or more first substructures at least partially stacked on one another, a top surface of the first substructure is a polygonal plane, and a one-dimensional size of the top surface of the outermost first substructure is less than or equal to 45 μm; and wherein a front surface of the semiconductor substrate has a second texture structure, the second texture structure includes a pyramid-shaped microstructure, the pyramid-shaped microstructure includes a top portion away from the front surface of the semiconductor substrate and a bottom portion close to the front surface of the semiconductor substrate, and in a direction away from the front surface and perpendicular to the front surface, a distance between the top portion and the bottom portion of the pyramid-shaped microstructure is less than or equal to 5 μm;
a first passivation layer located on the second texture structure of the front surface of the semiconductor substrate;
a tunnel oxide layer located on the first texture structure of the rear surface of the semiconductor substrate;
a doped conductive layer located on a surface of the tunnel oxide layer, wherein the doped conductive layer includes a P-type doped conductive layer and an N-type doped conductive layer; and
a second passivation layer located on a surface of the doped conductive layer.