US 11,843,068 B2
Photoelectric conversion element and photoelectric conversion system
Takako Suga, Kanagawa (JP); and Takeshi Uchida, Kanagawa (JP)
Assigned to CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on Dec. 17, 2020, as Appl. No. 17/125,631.
Claims priority of application No. 2019-236001 (JP), filed on Dec. 26, 2019.
Prior Publication US 2021/0202775 A1, Jul. 1, 2021
Int. Cl. H01L 31/054 (2014.01); H01L 27/146 (2006.01)
CPC H01L 31/0547 (2014.12) [H01L 27/14629 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A photoelectric conversion element comprising:
a photoelectric conversion layer;
a first reflecting mirror disposed on a substrate;
a resonator provided on the first reflecting mirror; and
a second reflecting mirror provided on the resonator,
wherein the first reflecting mirror includes a distributed Bragg reflector (DBR) including a plurality of semiconductor layers,
wherein the photoelectric conversion layer is disposed in at least one layer of the plurality of semiconductor layers,
wherein the photoelectric conversion layer is an i-type semiconductor,
wherein the plurality of semiconductor layers include a first layer immediately above the photoelectric conversion layer and a second layer immediately below the photoelectric conversion layer, and
wherein each of the first layer and the second layer are an i-type semiconductor.