US 11,843,058 B2
Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structures
Gilbert Dewey, Hillsboro, OR (US); Abhishek Sharma, Hillsboro, OR (US); Van Le, Beaverton, OR (US); Jack Kavalieros, Portland, OR (US); Shriram Shivaraman, Hillsboro, OR (US); Seung Hoon Sung, Portland, OR (US); Tahir Ghani, Portland, OR (US); Arnab Sen Gupta, Beaverton, OR (US); Nazila Haratipour, Hillsboro, OR (US); and Justin Weber, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Nov. 1, 2021, as Appl. No. 17/516,569.
Application 17/516,569 is a continuation of application No. 16/455,581, filed on Jun. 27, 2019, granted, now 11,171,243.
Prior Publication US 2022/0052200 A1, Feb. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/786 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/221 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 21/823807 (2013.01); H01L 27/092 (2013.01); H01L 29/221 (2013.01); H01L 29/78696 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A transistor structure, comprising:
a substrate material;
a channel material of a first composition comprising oxygen and one or more metals, wherein the channel material is over the substrate material and has a lateral length comprising first and second portions separated by an intervening third portion of the channel material;
a gate electrode over, and separated from the substrate material by, the third portion of the channel material;
a gate dielectric material in direct contact with the third portion of the channel material, the gate dielectric material between the gate electrode and the third portion of the channel material;
a source contact metallization coupled with the first portion of the channel material, wherein a first portion of a contact buffer material is between the first portion of the channel material and the source contact metallization; and
a drain contact metallization coupled with the second portion of the channel material, wherein a second portion of the contact buffer material is between the second portion of the channel material and the drain contact metallization, and wherein the contact buffer material is of a second composition comprising oxygen and one or more metals.