US 11,843,034 B2
Lateral bipolar transistor
Man Gu, Malta, NY (US); Haiting Wang, Clifton Park, NY (US); and Jagar Singh, Clifton Park, NY (US)
Assigned to GLOBALFOUNDRIES U.S. INC., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed on Nov. 17, 2021, as Appl. No. 17/529,002.
Claims priority of provisional application 63/236,879, filed on Aug. 25, 2021.
Prior Publication US 2023/0062747 A1, Mar. 2, 2023
Int. Cl. H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01); H01L 29/423 (2006.01)
CPC H01L 29/1008 (2013.01) [H01L 29/42304 (2013.01); H01L 29/6625 (2013.01); H01L 29/735 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising a lateral bipolar junction transistor comprising an extrinsic base region and a bilayer dielectric spacer on sidewalls of the extrinsic base region and a p-n junction positioned under the bilayer dielectric spacer between the extrinsic base region and at least an emitter region, the p-n junction being within a buried insulator layer under the extrinsic base region and comprising an intrinsic region with different dopant types.