US 11,843,024 B2
Micro LED display device and manufacturing method thereof
Yu-Yun Lo, Miaoli County (TW); Bo-Wei Wu, Miaoli County (TW); Yi-Chun Shih, Miaoli County (TW); Tzu-Yu Ting, Miaoli County (TW); and Kuan-Yung Liao, Miaoli County (TW)
Assigned to PlayNitride Display Co., Ltd., Miaoli County (TW)
Filed by PlayNitride Display Co., Ltd., Miaoli County (TW)
Filed on Nov. 9, 2020, as Appl. No. 17/093,588.
Claims priority of application No. 109129788 (TW), filed on Aug. 31, 2020.
Prior Publication US 2022/0069000 A1, Mar. 3, 2022
Int. Cl. H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/48 (2010.01); H01L 33/38 (2010.01)
CPC H01L 27/156 (2013.01) [H01L 33/005 (2013.01); H01L 33/382 (2013.01); H01L 33/486 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A micro LED display device, comprising:
a micro light emitting unit comprising:
a plurality of micro light emitting elements, wherein each of the micro light emitting elements comprises:
a semiconductor structure comprising a first type semiconductor layer, a light emitting layer and a second type semiconductor layer; and
an electrode structure comprising a first type electrode and a second type electrode, wherein the first type electrode and the second type electrode are electrically connected to the first type semiconductor layer and the second type semiconductor layer, respectively, and the first type electrode has a first surface and a sidewall connected to the first surface;
a conductive structure comprising a first type conductive layer and a second type conductive layer, wherein the first type conductive layer is electrically connected to the first type electrode, wherein the first type conductive layer extends along a sidewall of the second type electrode, a sidewall of the light emitting layer, a sidewall of the first type semiconductor layer, and the first surface and the sidewall of the first type electrode, and wherein the second type conductive layer is electrically connected to the second type electrode;
a substrate, wherein the micro light emitting unit is disposed on the substrate, and the electrode structure is disposed toward the substrate and comprises a gap therebetween;
an isolation layer connected between and in contact with the electrode structure and the substrate; and
an insulation layer on a surface of the semiconductor structure, wherein the insulation layer comprises a bottom portion and a side portion connected to the bottom portion, and the bottom portion and the side portion are disposed between the conductive structure and the semiconductor structure.