US 11,843,016 B2
Image sensor
Jingyun Kim, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD.
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 16, 2021, as Appl. No. 17/402,665.
Application 17/402,665 is a continuation of application No. 16/677,710, filed on Nov. 8, 2019, granted, now 11,121,163.
Claims priority of application No. 10-2019-0024021 (KR), filed on Feb. 28, 2019.
Prior Publication US 2021/0375964 A1, Dec. 2, 2021
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14616 (2013.01); H01L 27/14643 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a semiconductor substrate of first conductivity type having a first surface and a second surface opposing the first surface;
photoelectric conversion regions of second conductivity type, two-dimensionally arranged in the semiconductor substrate; and
a pixel isolation structure extending entirely through the semiconductor substrate from the first surface to the second surface and surrounding each of the photoelectric conversion regions,
wherein the pixel isolation structure comprises
a semiconductor pattern vertically penetrating the semiconductor substrate, and
a sidewall insulating pattern surrounding a sidewall of the semiconductor pattern,
wherein the semiconductor pattern includes an upper region adjacent to the first surface and a lower region adjacent to the second surface,
a dopant concentration of the semiconductor pattern has a maximum value in the upper region, and
the upper region is provided in a region from a top surface of the semiconductor pattern.