US 11,842,979 B2
Semiconductor device and method of manufacturing the same
Yi-Jen Lo, New Taipei (TW); Hsih Yang Chiu, Taoyuan (TW); Ching Hung Chang, Taoyuan (TW); and Chiang-Lin Shih, New Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Mar. 11, 2021, as Appl. No. 17/198,252.
Prior Publication US 2022/0293552 A1, Sep. 15, 2022
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01)
CPC H01L 24/80 (2013.01) [H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/8038 (2013.01); H01L 2224/80894 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/1436 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a first stacking unit disposed on the substrate and comprising a first dielectric layer and a first metal component; and
a second stacking unit disposed on the first stacking unit and comprising at least two second dielectric layers and at least two second metal components, two adjacent second dielectric layers directly contact each other, and two adjacent second metal components directly contact each other, wherein one of the at least two second metal components comprises a through-silicon via, the first dielectric layer directly contacts the second dielectric layer, the first metal component directly contacts the through-silicon via of one of the at least two second metal components, and the semiconductor device is homogeneous in functionality.