US 11,842,975 B2
Electronic device with multi-layer contact and system
Alexander Heinrich, Regensburg (DE); Michael Juerss, Regenstauf (DE); Konrad Roesl, Teublitz (DE); Oliver Eichinger, Regensburg (DE); Kok Chai Goh, Melaka (MY); and Tobias Schmidt, Regensburg (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Nov. 11, 2019, as Appl. No. 16/679,883.
Application 16/679,883 is a division of application No. 16/126,190, filed on Sep. 10, 2018, granted, now 10,475,761.
Application 16/126,190 is a division of application No. 15/282,927, filed on Sep. 30, 2016, abandoned.
Application 15/282,927 is a continuation of application No. 13/309,163, filed on Dec. 1, 2011, granted, now 9,490,193, issued on Nov. 8, 2016.
Prior Publication US 2020/0075530 A1, Mar. 5, 2020
Int. Cl. H01L 29/43 (2006.01); H01L 23/00 (2006.01); H01L 29/45 (2006.01); H01L 23/495 (2006.01); H01L 23/482 (2006.01)
CPC H01L 24/32 (2013.01) [H01L 23/4827 (2013.01); H01L 23/49513 (2013.01); H01L 23/49541 (2013.01); H01L 23/49582 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/83 (2013.01); H01L 29/43 (2013.01); H01L 29/45 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03438 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/08503 (2013.01); H01L 2224/2745 (2013.01); H01L 2224/291 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29084 (2013.01); H01L 2224/29101 (2013.01); H01L 2224/29105 (2013.01); H01L 2224/29109 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29113 (2013.01); H01L 2224/29118 (2013.01); H01L 2224/29124 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/29166 (2013.01); H01L 2224/29169 (2013.01); H01L 2224/29171 (2013.01); H01L 2224/29184 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/32503 (2013.01); H01L 2224/32507 (2013.01); H01L 2224/8346 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83439 (2013.01); H01L 2224/83444 (2013.01); H01L 2224/83447 (2013.01); H01L 2224/83455 (2013.01); H01L 2224/83464 (2013.01); H01L 2224/83469 (2013.01); H01L 2224/83815 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01048 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/1776 (2013.01); H01L 2924/17738 (2013.01); H01L 2924/17747 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A system comprising:
a carrier having a metallic surface comprising Ni, NiNiP, or NiV;
an intermetallic phase layer disposed on the carrier, the intermetallic phase layer comprising Ni and Sn, wherein the intermetallic phase layer comprises a quasi-binary alloy with a metal of the metallic surface;
a solder layer disposed on the intermetallic phase layer, the solder layer comprising Sn;
an adhesion layer directly disposed on the solder layer, the adhesion layer comprising Ni;
a functional layer directly disposed on the adhesion layer, the functional layer comprising Ti, TiW or W;
an electrical contact layer directly disposed on the functional layer, the electrical contact layer comprising Al, Ti, Ag or Cr; and
a semiconductor substrate directly disposed on the electrical contact layer;
wherein the quasi-binary alloy is formed between the solder layer and the carrier having the metallic surface.