US 11,842,959 B2
Metal-Insulator-Metal structure
Yuan-Yang Hsiao, Hsinchu (TW); Hsiang-Ku Shen, Hsinchu (TW); and Dian-Hau Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Sep. 3, 2021, as Appl. No. 17/466,013.
Application 17/466,013 is a division of application No. 16/802,246, filed on Feb. 26, 2020, granted, now 11,114,373.
Prior Publication US 2021/0398896 A1, Dec. 23, 2021
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 21/027 (2006.01)
CPC H01L 23/5223 (2013.01) [H01L 21/0214 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 28/60 (2013.01); H01L 21/0217 (2013.01); H01L 21/0271 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02178 (2013.01); H01L 21/02189 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 28/87 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a metal-insulator-metal (MIM) structure over a substrate, wherein the forming of the MIM structure comprises:
forming a bottom plate layer that includes a first opening and a second opening,
wherein the first opening and the second opening are separated from one another by a portion of the bottom plate layer;
depositing a first insulator layer over the bottom plate layer;
forming a middle plate layer that includes:
a third opening vertically aligned with the first opening, and
a first dummy plate disposed within the third opening;
depositing a second insulator layer over the middle plate layer;
forming a top plate layer that includes:
a fourth opening vertically aligned with the first opening and the third opening,
a fifth opening vertically aligned with the second opening, wherein the fifth opening and the fourth opening are separated from one another by a portion of the top plate layer,
a second dummy plate disposed within the fourth opening, and
a third dummy plate disposed within the fifth opening; and
depositing a dielectric layer over the MIM structure.