US 11,842,884 B2
Spatial monitoring and control of plasma processing environments
Denis Shaw, Fort Collins, CO (US); Kevin Fairbairn, Los Gatos, CA (US); and Daniel Carter, Fort Collins, CO (US)
Assigned to Advanced Energy Industries, Inc., Fort Collins, CO (US)
Filed by Advanced Energy Industries, Inc., Fort Collins, CO (US)
Filed on Mar. 11, 2022, as Appl. No. 17/692,880.
Application 17/692,880 is a continuation of application No. 16/896,709, filed on Jun. 9, 2020, granted, now 11,282,677.
Application 16/896,709 is a continuation of application No. 16/194,104, filed on Nov. 16, 2018, granted, now 10,707,055, issued on Jul. 7, 2020.
Claims priority of provisional application 62/588,224, filed on Nov. 17, 2017.
Prior Publication US 2022/0285131 A1, Sep. 8, 2022
Int. Cl. H01J 37/32 (2006.01); H01L 21/67 (2006.01)
CPC H01J 37/32174 (2013.01) [H01J 37/32412 (2013.01); H01J 37/32477 (2013.01); H01J 37/32559 (2013.01); H01J 37/32568 (2013.01); H01J 37/32706 (2013.01); H01J 37/32935 (2013.01); H01L 21/67109 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method comprising:
applying power to a first electrical plane in a plasma processing chamber with a first bias supply;
applying power to a second electrical plane in the plasma processing chamber with a second bias supply, wherein the second electrical plane is separate from the first electrical plane;
measuring at least one characteristic of the power that is applied by the first bias supply;
measuring at least one characteristic of the power that is applied by the second bias supply;
determining characteristics of an environment within the plasma processing chamber based upon the measured characteristics of the power applied to the first electrical plane and the second electrical plane with the first bias supply and the second bias supply, respectively; and
adjusting at least one electrical or mechanical feature of the plasma processing chamber based upon the measured characteristics of the power applied to the first electrical plane and the second electrical plane with the first bias supply and the second bias supply, respectively.