US 11,842,789 B2
Capacitor string structure, memory device and electronic device
Chung-Kuang Chen, Hsinchu (TW); and Tzeng-Huei Shiau, Hsin-Chu (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX International Co., Ltd., Hsinchu (TW)
Filed on Mar. 30, 2022, as Appl. No. 17/709,174.
Prior Publication US 2023/0317121 A1, Oct. 5, 2023
Int. Cl. G11C 5/14 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); G11C 5/06 (2006.01)
CPC G11C 5/145 (2013.01) [G11C 5/063 (2013.01); G11C 5/147 (2013.01); H01L 23/528 (2013.01); H01L 23/5223 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A capacitor string structure, comprising:
a plurality of conductive plates disposed in a memory device, and the plurality of conductive plates stacked on each other and respectively forming a plurality of word lines in the memory device, wherein a capacitor is formed between two adjacent ones of the plurality of conductive plates,
wherein among the plurality of conductive plates, a plurality of first conductive plates have a plurality of first protrusions overlapping each other, and a plurality of second conductive plates have a plurality of second protrusions overlapping each other, and the plurality of first protrusions and the plurality of second protrusions are non-overlapped.