US 11,842,780 B2
Semiconductor device and electronic apparatus including the same
Mikio Oka, Kanagawa (JP); Yasuo Kanda, Kanagawa (JP); and Kenji Noguchi, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/439,454
Filed by Sony Semiconductor Solutions Corporation, Kanagawa (JP)
PCT Filed Jan. 31, 2020, PCT No. PCT/JP2020/003588
§ 371(c)(1), (2) Date Sep. 15, 2021,
PCT Pub. No. WO2020/195151, PCT Pub. Date Oct. 1, 2020.
Claims priority of application No. 2019-055290 (JP), filed on Mar. 22, 2019.
Prior Publication US 2022/0157395 A1, May 19, 2022
Int. Cl. G11C 17/16 (2006.01); G11C 17/06 (2006.01); G11C 17/18 (2006.01)
CPC G11C 17/06 (2013.01) [G11C 17/18 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a storage element including a filament that has a first conductive layer, a second conductive layer, and an insulation layer, the first conductive layer and the second conductive layer being stacked with at least the insulation layer interposed between the first conductive layer and the second conductive layer, the filament obtaining at least three identifiable resistance states by changing a combination of a state of the first conductive layer, a state of the second conductive layer, and a state of the insulation layer; and
a writing unit that produces the at least three identifiable resistance states by applying a blow current to the storage element, wherein
the at least three identifiable resistance states of the filament include an initial state, a low resistance state that is a lower resistance state than the initial state, and a high resistance state that is a higher resistance state than the initial state,
the low resistance state includes a state where the insulation layer has been damaged, and
the high resistance state includes a state where at least either the first conductive layer or the second conductive layer has been damaged.