US 11,841,767 B2
Controller controlling non-volatile memory device, storage device including the same, and operating method thereof
Kyungeun Choi, Hwasung-si (KR); and Wooseong Cheong, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 10, 2022, as Appl. No. 17/740,794.
Claims priority of application No. 10-2021-0162954 (KR), filed on Nov. 24, 2021; and application No. 10-2022-0006688 (KR), filed on Jan. 17, 2022.
Prior Publication US 2023/0161667 A1, May 25, 2023
Int. Cl. H03M 13/27 (2006.01); H04L 27/34 (2006.01); H04L 1/00 (2006.01); H03M 13/25 (2006.01); G06F 11/10 (2006.01); G06F 11/07 (2006.01); G06F 13/16 (2006.01); G06F 13/28 (2006.01)
CPC G06F 11/1068 (2013.01) [G06F 11/0772 (2013.01); G06F 13/1673 (2013.01); G06F 13/28 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An operating method of a storage device, the operating method comprising:
receiving a host read command from a host device;
identifying whether a read path corresponding to the host read command corresponds to a first direct memory access (DMA) read path or a second DMA read path;
directly outputting, by a host DMA manager, read data stored in an output buffer of an error correction circuit to the host device based on the read path corresponding to the first DMA read path; and
outputting, by the host DMA manager, the read data stored in the output buffer of the error correction circuit to a buffer memory, and from the buffer memory to the host device, based on the read path corresponding to the second DMA read path.