US 11,841,617 B2
Method of forming a narrow trench
Anton J. Devilliers, Clifton Park, NY (US); Jodi Grzeskowiak, Schenectady, NY (US); Daniel Fulford, Ballston Lake, NY (US); Richard A. Farrell, Nassau, NY (US); and Jeffrey Smith, Clifton Park, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Sep. 17, 2020, as Appl. No. 17/023,470.
Claims priority of provisional application 62/902,434, filed on Sep. 19, 2019.
Prior Publication US 2021/0088904 A1, Mar. 25, 2021
Int. Cl. G03F 7/039 (2006.01); H01L 21/027 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/16 (2006.01)
CPC G03F 7/039 (2013.01) [G03F 7/16 (2013.01); G03F 7/2002 (2013.01); G03F 7/30 (2013.01); H01L 21/0274 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a pattern on a substrate, the method comprising:
forming a first layer on an underlying layer of the substrate, the first layer patterned to have a first structure;
depositing a grafting material on side surfaces of the first structure, the grafting material including a solubility-shifting material;
diffusing the solubility-shifting material by a predetermined distance into a neighboring structure that abuts the solubility-shifting material, the solubility-shifting material changing solubility of the neighboring structure in a developer; and
removing soluble portions of the neighboring structure using the developer to form a second structure, wherein
the first structure comprises a first opening of the first layer,
the neighboring structure is a portion of the first layer,
the first layer comprises a photoresist material, and
the second structure comprises a second opening of the first layer, wherein a latent pattern of the second opening is formed by patterned exposure of the first layer to actinic radiation prior to diffusing the solubility-shifting material.