US 11,840,760 B2
Layer deposition method and layer deposition apparatus
Shin-Jae Kang, Seoul (KR); Dong-Hoon Han, Seoul (KR); Do-Hyung Kim, Seongnam-si (KR); Kyung-Wook Park, Daegu (KR); Kevin Bae, Hwaseong-si (KR); Sun-Soo Lee, Yongin-si (KR); In-Jae Lee, Seoul (KR); Jeon-Il Lee, Suwon-si (KR); and Chae-Mook Lim, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 3, 2018, as Appl. No. 16/207,967.
Claims priority of application No. 10-2018-0038029 (KR), filed on Apr. 2, 2018.
Prior Publication US 2019/0301016 A1, Oct. 3, 2019
Int. Cl. C23C 16/455 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); C23C 16/34 (2006.01)
CPC C23C 16/45544 (2013.01) [C23C 16/34 (2013.01); C23C 16/45561 (2013.01); H01L 21/28562 (2013.01); H01L 21/76843 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A layer deposition method, comprising:
loading a substrate into a process chamber;
charging a plurality of gas filling tanks with a gas to a predetermined charge pressure, wherein the gas is supplied from a gas supply source;
elevating the pressure of the gas to a pressure greater than the predetermined charge pressure by discharging the gas from the plurality of gas filling tanks into a supply line prior to a closed introduction control valve, wherein the pressure-elevated gas consists of the gas supplied from the gas supply source; and
introducing the pressure-elevated gas into the process chamber from the supply line.