CPC C09J 4/06 (2013.01) [B32B 7/12 (2013.01); B32B 17/06 (2013.01); B32B 37/12 (2013.01); B32B 43/006 (2013.01); C09J 7/30 (2018.01); C09J 9/02 (2013.01); C09J 11/04 (2013.01); H01L 21/6835 (2013.01); B32B 2037/1253 (2013.01); B32B 2310/0825 (2013.01); C09J 2203/326 (2013.01); C09J 2203/37 (2020.08); C09J 2409/00 (2013.01); C09J 2433/00 (2013.01); H01L 2221/68381 (2013.01)] | 11 Claims |
1. A semiconductor device manufacturing method, the method comprising:
a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order; and
a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member,
wherein the supporting member is a glass substrate.
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