US 11,840,645 B2
CMP composition for polishing hard materials
Rajiv K. Singh, Newberry, FL (US); Sunny De, Gainesville, FL (US); Deepika Singh, Newberry, FL (US); Chaitanya Dnyanesh Ginde, Gainesville, FL (US); and Aditya Dilip Verma, Gainesville, FL (US)
Assigned to ENTEGRIS, INC., Billerica, MA (US)
Filed by ENTEGRIS, INC., Billerica, MA (US); and UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC., Gainesville, FL (US)
Filed on Jan. 30, 2021, as Appl. No. 17/163,372.
Claims priority of provisional application 62/968,480, filed on Jan. 31, 2020.
Prior Publication US 2021/0238448 A1, Aug. 5, 2021
Int. Cl. C09G 1/02 (2006.01); H01L 21/321 (2006.01); B24B 37/00 (2012.01)
CPC C09G 1/02 (2013.01) [B24B 37/00 (2013.01); H01L 21/3212 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A slurry for chemical mechanical polishing (CMP), comprising:
an aqueous liquid carrier;
a transition metal oxy compound chosen from oxy-nitrates, oxy-chlorides, oxysulfates, oxy-carbonates, and C2-C10 oxy-alkanoates; and
a per-based oxidizer, wherein the per-based oxidizer has a cation to anion ratio (CAR) value varying between 0.0 to 1.0; further comprising from about 0.001 to about 3% by weight abrasive oxide particles, wherein the abrasive oxide particles comprise zirconia or alumina, and has an isoelectric point (IEP) value of 0.5 to 4.0.