US 11,840,458 B2
Layered GaN and GaN nanosheet, and electrical device using the same
Woo-young Shim, Seoul (KR); and Jong-bum Won, Seoul (KR)
Assigned to Industry-Academic Cooperation Foundation, Yonsei University, Seoul (KR)
Filed by Industry-Academic Cooperation Foundation, Yonsei University, Seoul (KR)
Filed on Dec. 3, 2020, as Appl. No. 17/111,087.
Claims priority of application No. 10-2020-0115372 (KR), filed on Sep. 9, 2020.
Prior Publication US 2022/0073364 A1, Mar. 10, 2022
Int. Cl. C01G 15/00 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01)
CPC C01G 15/006 (2013.01) [H01L 29/0665 (2013.01); H01L 29/2003 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01P 2004/24 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A layered compound having a two-dimensional layered structure represented by Formula 1 below:
M1-xGayNz  [Formula 1]
(M is at least one of Group II elements, and 0.25≤x≤0.8, 0.6≤y≤1.25, and 0.75≤z≤1.5),
wherein the M is positioned between GayNz layers such that the GayNz layers are interlayer-bonded by the M.