US 12,495,657 B1
Micro-LED with field-effect isolation
Andrea Pinos, Plymouth (GB); Wei Sin Tan, Plymouth (GB); Samir Mezouari, Swindon (GB); and Sean Denis Connor, Swindon (GB)
Assigned to Meta Platforms Technologies, LLC, Menlo Park, CA (US)
Filed by Meta Platforms Technologies, LLC, Menlo Park, CA (US)
Filed on Dec. 9, 2022, as Appl. No. 18/063,923.
Int. Cl. H10H 29/14 (2025.01); H01L 25/18 (2023.01)
CPC H10H 29/142 (2025.01) [H01L 25/18 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A micro-light emitting diode (micro-LED) device comprising:
a plurality of semiconductor epitaxial layers, the plurality of semiconductor epitaxial layers including a quantum well layer configured to emit light;
an array of electrodes for an array of micro-LEDs, the array of electrodes coupled to the plurality of semiconductor epitaxial layers;
an insulator grid coupled to the plurality of semiconductor epitaxial layers and positioned in regions between individual electrodes of the array of electrodes; and
a gate grid coupled to the insulator grid and configured to apply an electric field through the insulator grid to the plurality of semiconductor epitaxial layers in the regions between the individual electrodes of the array of electrodes to electrically isolate the plurality of semiconductor epitaxial layers into individual micro-LEDs of the array of micro-LEDs,
wherein the gate grid is configured to apply the electric field to accumulate electrons in regions of the quantum well layer that are aligned with the gate grid.