US 12,495,632 B2
Semiconductor image sensor and method for forming the same
Jhy-Jyi Sze, Hsin-Chu (TW); Yi-Shin Chu, Hsinchu (TW); Yin-Kai Liao, Taipei (TW); Hsiang-Lin Chen, Hsinchu (TW); Sin-Yi Jiang, Hsinchu (TW); and Kuan-Chieh Huang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/461,118.
Prior Publication US 2023/0069164 A1, Mar. 2, 2023
Int. Cl. H10F 39/10 (2025.01); H10F 39/00 (2025.01)
CPC H10F 39/809 (2025.01) [H10F 39/018 (2025.01); H10F 39/811 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor image sensor comprising:
receiving a first substrate comprising a first front side and a first back side opposite to the first front side, wherein the first substrate includes a first light-sensing element;
bonding the first substrate to a carrier with the first front side facing the carrier;
thinning the first substrate from the first back side;
bonding the first substrate to a second substrate comprising a second front side and a second back side opposite to the second front side with the first back side of the first substrate facing the second front side of the second substrate, wherein the second substrate includes a second light-sensing element;
removing the carrier;
forming a first interconnect structure over the first front side of the first substrate;
forming a first connecting structure coupled to the first light-sensing element, and a second connecting structure coupled to the second light-sensing element; and
bonding the first substrate to a third substrate comprising a third front side and a third back side opposite to the third front side with the first front side of the first substrate facing the third front side of the third substrate, wherein the third substrate comprises a second interconnect structure.