US 12,495,623 B2
Lateral phototransistor
Alexander M. Derrickson, Saratoga Springs, NY (US); Uppili S. Raghunathan, Essex Junction, VT (US); Vibhor Jain, Williston, VT (US); Yusheng Bian, Ballston Lake, NY (US); and Judson R. Holt, Ballston Lake, NY (US)
Assigned to GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Dec. 6, 2022, as Appl. No. 18/075,908.
Prior Publication US 2024/0186441 A1, Jun. 6, 2024
Int. Cl. H10F 30/24 (2025.01); H10F 71/00 (2025.01); H10F 77/122 (2025.01); H10F 77/40 (2025.01)
CPC H10F 30/245 (2025.01) [H10F 71/1212 (2025.01); H10F 77/122 (2025.01); H10F 77/413 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A structure comprising: a lateral bipolar transistor comprising of an intrinsic base; and a T-shaped photosensitive structure extending within a trench of the intrinsic base and vertically above and in direct contact with the intrinsic base of the lateral bipolar transistor.