US 12,495,569 B2
High electron mobility transistor
Edward Yi Chang, Baoshan Township (TW); You-Chen Weng, New Taipei (TW); and Min-Lu Kao, Chiayi (TW)
Assigned to NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsinchu (TW); and NATIONAL CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY, Taoyuan (TW)
Filed by National Yang Ming Chiao Tung University, Hsinchu (TW); and National Chung-Shan Institute of Science and Technology, Taoyuan (TW)
Filed on Jan. 13, 2023, as Appl. No. 18/096,916.
Claims priority of application No. 111139820 (TW), filed on Oct. 20, 2022.
Prior Publication US 2024/0136432 A1, Apr. 25, 2024
Prior Publication US 2024/0234561 A9, Jul. 11, 2024
Int. Cl. H01L 29/778 (2006.01); H01L 29/15 (2006.01); H01L 29/20 (2006.01); H10D 30/47 (2025.01); H10D 62/815 (2025.01); H10D 62/85 (2025.01)
CPC H10D 30/475 (2025.01) [H10D 62/815 (2025.01); H10D 62/8503 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A high electron mobility transistor comprising:
a growth substrate;
a lattice matching layer formed on the growth substrate;
a back-barrier layer formed on the lattice matching layer, wherein the back-barrier layer comprises GaN doped with C, an AlN and GaN superlattice doped with C, or an AlN and AlGaN superlattice doped with C;
an electron blocking layer formed on the back-barrier layer, wherein the electron blocking layer comprises AlGaN, Al atoms of the AlGaN have a doping percent of 3˜5%, Ga atoms of the AlGaN have a doping percent of 95˜97%, and the electron blocking layer has a thickness of 2˜5 nm;
a channel layer formed on the electron blocking layer;
an active layer formed on the channel layer; and
a source, a gate, and a drain formed on the active layer, wherein the gate is located between the source and the drain.