US 12,495,542 B2
Semiconductor device and method for fabricating the same
Dong Yean Oh, Gyeonggi-do (KR); and Jin Sun Cho, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on May 26, 2023, as Appl. No. 18/324,159.
Claims priority of application No. 10-2022-0181583 (KR), filed on Dec. 22, 2022.
Prior Publication US 2024/0215227 A1, Jun. 27, 2024
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/488 (2023.02) [H10B 12/03 (2023.02); H10B 12/05 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a horizontal layer spaced apart from a lower structure to extend in a direction parallel to the lower structure;
a vertical conductive line extending in a direction perpendicular to the lower structure and coupled to a first-side end of the horizontal layer;
a data storage element coupled to a second-side end of the horizontal layer; and
a horizontal conductive line including a first horizontal conductive line and a second horizontal conductive line that are vertically asymmetrical with the horizontal layer interposed therebetween.