| CPC H01L 23/66 (2013.01) [H01Q 15/24 (2013.01); H01L 2223/6605 (2013.01); H01L 2223/6688 (2013.01)] | 18 Claims |
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10. A manufacturing method of a radiofrequency (RF) filter, comprising:
forming an isolation structure in a substrate;
forming a spacer structure on the substrate;
forming an electrically conductive structure on the isolation structure, wherein the spacer structure is located on a sidewall of the electrically conductive structure;
forming a dielectric layer on the electrically conductive structure;
forming a patterned electrically conductive film on the dielectric layer, wherein at least a part of the dielectric layer is located between the electrically conductive structure and the patterned electrically conductive film in a vertical direction; and
forming a first contact structure and a second contact structure on the patterned electrically conductive film, wherein the first contact structure and the second contact structure are electrically connected with the patterned electrically conductive film,
wherein the patterned electrically conductive film, the electrically conductive structure, and the dielectric layer located between the patterned electrically conductive film and the electrically conductive structure in the vertical direction constitute a capacitor structure.
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