US 12,494,391 B2
Semiconductor processing apparatus
Xiaoyan Ren, Beijing (CN); Yongfei Wang, Beijing (CN); Xiaoping Shi, Beijing (CN); Yunfeng Lan, Beijing (CN); Haifeng Qin, Beijing (CN); Wenqiang Zhang, Beijing (CN); and Hao Wang, Beijing (CN)
Assigned to BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
Appl. No. 18/254,049
Filed by BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
PCT Filed Nov. 17, 2021, PCT No. PCT/CN2021/131149
§ 371(c)(1), (2) Date May 23, 2023,
PCT Pub. No. WO2022/111354, PCT Pub. Date Jun. 2, 2022.
Claims priority of application No. 202011340051.0 (CN), filed on Nov. 25, 2020.
Prior Publication US 2023/0411188 A1, Dec. 21, 2023
Int. Cl. H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/67253 (2013.01) [H01L 21/67742 (2013.01); H01L 21/68714 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor processing apparatus, comprising:
a process chamber;
a gas intake device; and
a carrier device, wherein:
the process chamber includes a process area and a transfer area arranged below the process area, the gas intake device is disposed at a top of the process chamber for introducing a process gas into the process area;
the process chamber further includes a partition plate for dividing the process area and the transfer area;
the carrier device includes a base and a flow guide structure, the base is movable in a vertical direction and is disposed in the transfer area for carrying a to-be-processed workpiece;
the flow guide structure is arranged in the base and is connected to a gas supply source; and when the base is located at a process position, the flow guide structure is configured to blow a gas outward to a sidewall of the process chamber, such that a gas wall is formed between an outer peripheral surface of the base and an inner peripheral surface of the sidewall of the process chamber to prevent the process gas in the process area from entering the transfer area;
the flow guide structure includes a flow guide slot and a plurality of flow channels, the flow guide slot is arranged on an outer peripheral wall of the base and extends along a circumferential direction of the base, the plurality of flow channels are arranged in the base, two ends of a flow channel of the plurality of flow channels are connected to the flow guide slot and the gas supply source, respectively, and the plurality of flow channels are used to guide the gas from the gas supply source to the flow guide slot; and
an exhaust structure is disposed at the sidewall of the process chamber and is opposite to the flow guide structure and configured to discharge the gas blown out of the flow guide structure when the base is located at the process position.