US 12,494,384 B1
Chip defect modifying device and method
Yiqiang Chen, Guangzhou (CN); Yichi Zhang, Guangzhou (CN); and Chang Liu, Guangzhou (CN)
Assigned to China Electronic Product Reliability And Environmental Testing Research Institute, Guangzhou (CN)
Filed by China Electronic Product Reliability And Environmental Testing Research Institute, Guangzhou (CN)
Filed on Feb. 15, 2025, as Appl. No. 19/054,779.
Claims priority of application No. 202410720074.6 (CN), filed on Jun. 5, 2024.
Int. Cl. H01L 21/67 (2006.01); H01L 21/30 (2006.01)
CPC H01L 21/67017 (2013.01) [H01L 21/3003 (2013.01); H01L 21/67098 (2013.01); H01L 21/67253 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A chip defect modifying device, comprising:
a reactor, a heating module, a microwave module, an ultrasonic module, a carbon dioxide gas source, a modifying gas source, and a vacuuming apparatus;
wherein a chip and an activator are configured to be placed in the reactor, the vacuuming apparatus is connected to the reactor and configured to extract gas from the reactor, the carbon dioxide gas source is connected to the reactor and configured to introduce carbon dioxide into the reactor; the modifying gas source is connected to the reactor and configured to introduce hydrogen gas or hydrogen isotope gas into the reactor; the heating module is connected to the reactor and is disposed on a bottom of the reactor, the heating module is configured to heat the reactor to make the carbon dioxide in the reactor be in a supercritical state; the microwave module is connected to the reactor and configured to heat the chip in the reactor; the ultrasonic module is connected to the reactor and configured to cause a supercritical fluid of the carbon dioxide in the reactor to vibrate by the ultrasonic module; the microwave module and the ultrasonic module both are disposed outside the reactor, an emission end of the microwave module and an emission end of the ultrasonic module both extend into an interior of the reactor;
the microwave module and the ultrasonic module both are sealingly connected to the reactor; the activator is platinum, the platinum is configured to adsorb hydrogen gas or hydrogen isotope gas molecules to thereby form hydrogen atoms or hydrogen isotope atoms to form covalent bonds between the hydrogen atoms or the hydrogen isotope atoms and atoms in the chip for enhancing a passivation effect to modify defects of the chip; and
wherein a power of the microwave module is in a range of 100 watts (W)-5000 W, and a frequency of the microwave module is in a range of 300 MHz-3000 MHz and the power of the ultrasonic module is in a range of 100 W-3000 W, and the frequency of the ultrasonic module 15 is in a range of 20 kHz-200 kHz.