US 12,494,361 B2
Method for selective deposition of silicon nitride and structure including selectively-deposited silicon nitride layer
Agung Setiadi, Kokubunji (JP); Hiroki Matsuda, Tama (JP); and Jun Kawahara, Tokyo (JP)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jul. 6, 2023, as Appl. No. 18/218,726.
Claims priority of provisional application 63/359,934, filed on Jul. 11, 2022.
Prior Publication US 2024/0014030 A1, Jan. 11, 2024
Int. Cl. H01L 21/02 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/0217 (2013.01) [H01J 37/32449 (2013.01); H01J 37/32816 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01J 2237/182 (2013.01); H01J 2237/332 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for selectively depositing silicon nitride, the method comprising:
providing a substrate, comprising a surface comprising a first material and a second material, within a reaction chamber of a reactor;
performing one or more deposition cycles, wherein each deposition cycles comprises:
pulsing a silicon precursor to the reaction chamber for a precursor pulse period;
providing a reactant gas to the reaction chamber; and
providing a deposition plasma power for a deposition plasma period to form activated species from the reactant gas; and
performing a treatment process comprising:
providing a treatment gas to the reaction chamber; and
providing a treatment plasma power for a treatment plasma period to form activated species from the treatment gas,
wherein the reactant gas comprises a reactant and the treatment gas, and
wherein the silicon nitride is selectively deposited on the first material relative to the second material.