US 12,492,488 B2
Silicon carbide epitaxial growth device and method of manufacturing silicon carbide epitaxial wafer
Masashi Sakai, Tokyo (JP); Shinichiro Katsuki, Tokyo (JP); Kazuo Kobayashi, Tokyo (JP); and Yasunari Hino, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Apr. 29, 2020, as Appl. No. 16/861,885.
Claims priority of application No. 2019-129923 (JP), filed on Jul. 12, 2019.
Prior Publication US 2021/0010158 A1, Jan. 14, 2021
Int. Cl. C30B 25/12 (2006.01); C23C 16/32 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C30B 25/10 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01)
CPC C30B 25/12 (2013.01) [C23C 16/325 (2013.01); C23C 16/4584 (2013.01); C23C 16/46 (2013.01); C30B 25/10 (2013.01); C30B 29/36 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/0262 (2013.01); H01L 21/02634 (2013.01); H01L 21/67103 (2013.01); H01L 21/68757 (2013.01); H01L 21/68785 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A silicon carbide epitaxial growth device comprising:
a wafer holder on which a silicon carbide substrate is mounted;
a turntable on which the wafer holder is mounted;
a susceptor covering the silicon carbide substrate and the wafer holder, and into which a growth gas, a doping gas, and a carrier gas are supplied;
induction heating coils provided around the susceptor; and
a tantalum carbide member mounted into the surface on a peripheral edge portion in an upper portion of the wafer holder and only at an outer edge of the silicon carbide substrate closest to an outermost periphery of the wafer holder.