US 12,491,581 B2
Wafer producing method
Kazuya Hirata, Tokyo (JP); and Ryohei Yamamoto, Tokyo (JP)
Assigned to DISCO CORPORATION, Tokyo (JP)
Filed by DISCO CORPORATION, Tokyo (JP)
Filed on Aug. 9, 2022, as Appl. No. 17/818,416.
Claims priority of application No. 2021-132371 (JP), filed on Aug. 16, 2021.
Prior Publication US 2023/0048318 A1, Feb. 16, 2023
Int. Cl. B23K 26/53 (2014.01); B23K 26/00 (2014.01); B23K 26/06 (2014.01); B23K 26/38 (2014.01); B23K 101/40 (2006.01); B23K 103/00 (2006.01); H01L 21/304 (2006.01)
CPC B23K 26/53 (2015.10) [B23K 26/0006 (2013.01); B23K 26/0643 (2013.01); B23K 26/38 (2013.01); H01L 21/304 (2013.01); B23K 2101/40 (2018.08); B23K 2103/56 (2018.08)] 9 Claims
OG exemplary drawing
 
1. A wafer producing method, comprising:
a peel-off layer forming step of forming a peel-off layer by positioning a focused spot of a laser beam having a wavelength transmittable through an ingot to a depth corresponding to a thickness of a wafer to be produced from a planarized first end surface of the ingot and applying the laser beam to the ingot;
a first chamfered portion forming step of forming on the ingot a first chamfered portion on the first end surface of the ingot by applying, from the first end surface side to a peripheral surplus region of the wafer to be produced, a laser beam having a wavelength absorbable by the wafer to be produced;
a peeling-off step of peeling off, from the peel-off layer, the wafer to be produced; and
a second chamfered portion forming step of forming a second chamfered portion by applying, from a peel-off surface side of a wafer peeled-off from the ingot to a peripheral surplus region on the peel-off surface of the wafer, the laser beam having a wavelength absorbable by the wafer.