US 11,839,163 B2
Storage element and memory
Yutaka Higo, Miyagi (JP); Masanori Hosomi, Kanagawa (JP); Kazuhiro Bessho, Kanagawa (JP); Tetsuya Yamamoto, Kanagawa (JP); Hiroyuki Ohmori, Kanawaga (JP); Kazutaka Yamane, Miyagi (JP); Yuki Oishi, Kanagawa (JP); and Hiroshi Kano, Kanagawa (JP)
Assigned to SONY CORPORATION, Tokyo (JP)
Filed by SONY CORPORATION, Tokyo (JP)
Filed on Apr. 11, 2022, as Appl. No. 17/717,362.
Application 14/045,055 is a division of application No. 11/564,595, filed on Nov. 29, 2006, granted, now 8,575,711, issued on Nov. 5, 2013.
Application 17/717,362 is a continuation of application No. 16/732,969, filed on Jan. 2, 2020, granted, now 11,322,681.
Application 16/732,969 is a continuation of application No. 16/150,874, filed on Oct. 3, 2018, granted, now 10,566,523, issued on Feb. 18, 2020.
Application 16/150,874 is a continuation of application No. 15/933,512, filed on Mar. 23, 2018, granted, now 10,128,436, issued on Nov. 13, 2018.
Application 15/933,512 is a continuation of application No. 15/585,857, filed on May 3, 2017, granted, now 9,978,933, issued on May 22, 2018.
Application 15/585,857 is a continuation of application No. 15/007,382, filed on Jan. 27, 2016, granted, now 9,728,716, issued on Aug. 8, 2017.
Application 15/007,382 is a continuation of application No. 14/045,055, filed on Oct. 3, 2013, granted, now 9,287,493, issued on Mar. 15, 2016.
Claims priority of application No. 2005-348112 (JP), filed on Dec. 1, 2005.
Prior Publication US 2022/0238797 A1, Jul. 28, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 50/85 (2023.01); B82Y 10/00 (2011.01); B82Y 25/00 (2011.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/85 (2023.02) [B82Y 10/00 (2013.01); B82Y 25/00 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02)] 21 Claims
OG exemplary drawing
 
1. A storage element comprising:
a first layer with a magnetization direction that is changeable by a current;
a second layer provided on a first side of the first layer;
an intermediate layer provided between the first layer and the second layer; and
a third layer provided on a second side of the first layer opposite the first side,
wherein the first layer includes at least Co, Fe and B, and
wherein the third layer includes at least Ta and O.