US 11,839,158 B2
Silicide alloy material and thermoelectric conversion device in which same is used
Yoichiro Koda, Ayase (JP); Ryo Akiike, Ayase (JP); and Hideto Kuramochi, Ayase (JP)
Assigned to TOSOH CORPORATION, Shunan (JP)
Appl. No. 17/422,953
Filed by TOSOH CORPORATION, Shunan (JP)
PCT Filed Jan. 15, 2020, PCT No. PCT/JP2020/001073
§ 371(c)(1), (2) Date Jul. 14, 2021,
PCT Pub. No. WO2020/149304, PCT Pub. Date Jul. 23, 2020.
Claims priority of application No. 2019-006659 (JP), filed on Jan. 18, 2019; application No. 2019-041217 (JP), filed on Mar. 7, 2019; application No. 2019-146704 (JP), filed on Aug. 8, 2019; and application No. 2019-227426 (JP), filed on Dec. 17, 2019.
Prior Publication US 2022/0149258 A1, May 12, 2022
Int. Cl. C22C 28/00 (2006.01); H10N 10/855 (2023.01); C22C 1/04 (2023.01); B22F 3/14 (2006.01)
CPC H10N 10/855 (2023.02) [C22C 1/04 (2013.01); C22C 28/00 (2013.01); B22F 3/14 (2013.01); B22F 2201/02 (2013.01); B22F 2201/11 (2013.01)] 10 Claims
 
1. A silicide-based alloy material comprising silicon and ruthenium as main components,
wherein when contents of silicon and ruthenium are denoted by Si and Ru, respectively, an atomic ratio of devices constituting the alloy material satisfies the following:
45 atm %≤Si/(Ru+Si)≤70 atm %
30 atm %≤Ru/(Ru+Si)≤55 atm %, and
wherein an average crystal grain size of the silicide-based alloy material is 50 μm or less.