US 11,838,002 B2
High frequency multilayer filter
Kwang Choi, Simpsonville, SC (US); and Marianne Berolini, Greenville, SC (US)
Assigned to KYOCERA AVX Components Corporation, Fountain Inn, SC (US)
Filed by AVX Corporation, Fountain Inn, SC (US)
Filed on Aug. 30, 2021, as Appl. No. 17/460,729.
Application 17/460,729 is a continuation of application No. 16/718,250, filed on Dec. 18, 2019, granted, now 11,114,993.
Claims priority of provisional application 62/782,464, filed on Dec. 20, 2018.
Prior Publication US 2021/0391842 A1, Dec. 16, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H03H 7/01 (2006.01); H03H 1/00 (2006.01); H03H 3/00 (2006.01)
CPC H03H 7/0115 (2013.01) [H03H 1/00 (2013.01); H03H 3/00 (2013.01); H03H 7/1725 (2013.01); H03H 7/1766 (2013.01); H03H 7/1775 (2013.01); H03H 2001/0085 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A high frequency multilayer filter comprising:
a plurality of dielectric layers;
a signal path having an input and an output;
an inductor comprising a conductive layer formed over a first dielectric layer;
a first via at a first location electrically connecting the conductive layer with the signal path;
a second via at a second location electrically connecting the conductive layer with at least one of the signal path or a ground; and
a capacitor comprising a first electrode and a second electrode that is separated from the first electrode by a second dielectric layer;
wherein the multilayer filter has a characteristic frequency that is greater than about 8 GHz, and
wherein the conductive layer of the inductor has an effective length between the first location and the second location that is less than about 5 mm.