US 11,837,683 B2
Indium-gallium-nitride light emitting diodes with increased red-light quantum efficiency
Michael Chudzik, Mountain View, CA (US); Michel Khoury, Santa Barbara, CA (US); and Max Batres, Redwood City, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 10, 2021, as Appl. No. 17/197,493.
Prior Publication US 2022/0293821 A1, Sep. 15, 2022
Int. Cl. H01L 33/32 (2010.01); H01L 33/16 (2010.01); H01L 33/08 (2010.01); H01L 33/10 (2010.01); H01L 33/18 (2010.01); H01L 33/00 (2010.01)
CPC H01L 33/32 (2013.01) [H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/08 (2013.01); H01L 33/10 (2013.01); H01L 33/16 (2013.01); H01L 33/18 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor processing method comprising:
forming a nucleation layer on a semiconductor substrate;
forming first, second, and third gallium-and-nitrogen-containing regions on the nucleation layer;
porosifying the first gallium-and-nitrogen-containing region, without porosifiying the second and third gallium-and-nitrogen-containing regions;
forming a first active region on the porosified first gallium-and-nitrogen-containing region, and a second active region on the unporosified second gallium-and-nitrogen-containing region; and
forming a third active region on the unporosified third gallium-and-nitrogen-containing region.