US 11,837,672 B2
Stacked multijunction solar cell having a dielectric insulating layer system
Tim Kubera, Leingarten (DE); and Bianca Fuhrmann, Heilbronn (DE)
Assigned to AZUR SPACE Solar Power GmbH, Heilbronn (DE)
Filed by AZUR SPACE Solar Power GmbH, Heilbronn (DE)
Filed on Aug. 31, 2020, as Appl. No. 17/007,517.
Claims priority of application No. 10 2019 006 096.2 (DE), filed on Aug. 29, 2019.
Prior Publication US 2021/0066516 A1, Mar. 4, 2021
Int. Cl. H01L 31/00 (2006.01); H01L 31/0224 (2006.01); H01L 31/056 (2014.01); H01L 31/0216 (2014.01); H01L 31/0687 (2012.01)
CPC H01L 31/02245 (2013.01) [H01L 31/02167 (2013.01); H01L 31/056 (2014.12); H01L 31/0687 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A stacked multijunction solar cell comprising:
a germanium substrate, which forms an underside of the multijunction solar cell;
a germanium subcell;
at least two III-V subcells, which follow each other;
a through-hole passing through the germanium substrate an the at least two III-V subcells to enable a front side of the multijunction solar cell to be contacted from a back side of the multijunction solar cell;
a dielectric insulating layer system integrally extending from a first surface section of the stacked multijunction solar cell at a bottom side of the dielectric insulating layer system over the through-hole passing to an upper side of the dielectric insulating layer system, the dielectric insulating layer system having a layer sequence comprising:
a bottom insulating layer integrally connected to the first surface section of the stacked multijunction solar cell; and
a top insulating layer formed an upper side of the dielectric insulating layer system; and
a metal coating integrally extending from the first surface section of the multijunction solar cell at the bottom side of the dielectric insulating layer system over the through-hole passing to the upper side of the dielectric insulating layer system and integrally and electrically conductively connected to a second surface section of the multijunction solar cell abutting the first surface section of the multijunction solar cell and being integrally connected to a covered section of the upper side of the dielectric insulating layer system, the metal coating contacting the front side of the dielectric insulating layer system and the backside of the dielectric insulating layer system via the through-hole,
wherein the top insulating layer comprises amorphous silicon or is formed substantially of amorphous silicon,
wherein the metal coating is disposed directly on the second surface section of the dielectric insulating layer system, and
wherein an entirety of the metal coating is a continuous, materially homogenous layer and directly contacts the dielectric insulating layer system and a portion of the dielectric insulating layer system on an upper side of the stacked multijunction solar cell is entirely and directly covered by the metal coating layer.