US 11,837,668 B2
Semiconductor element and semiconductor device
Chihiro Tomita, Kumamoto (JP); Tomohiro Hirai, Kumamoto (JP); Shintaro Okamoto, Kanagawa (JP); Kentaro Eda, Kumamoto (JP); Takashi Watanabe, Kumamoto (JP); Kazuki Yamaguchi, Kumamoto (JP); Norikazu Kasahara, Kumamoto (JP); and Kohei Suzuki, Kumamoto (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/280,274
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Sep. 30, 2019, PCT No. PCT/JP2019/038533
§ 371(c)(1), (2) Date Mar. 26, 2021,
PCT Pub. No. WO2020/071320, PCT Pub. Date Apr. 9, 2020.
Claims priority of application No. 2018-189230 (JP), filed on Oct. 4, 2018.
Prior Publication US 2022/0052208 A1, Feb. 17, 2022
Int. Cl. H01L 29/94 (2006.01)
CPC H01L 29/945 (2013.01) 7 Claims
OG exemplary drawing
 
1. A semiconductor element comprising:
a first semiconductor region that is arranged on a semiconductor substrate and includes a recess on a surface;
an insulation film that is arranged adjacent to the surface of the first semiconductor region;
a gate electrode that is arranged adjacent to the insulation film and between which and the first semiconductor region, a MOS capacitor is constituted; and
a second semiconductor region that is arranged adjacent to a left side and a right side of the first semiconductor region on the semiconductor substrate in a cross-sectional view, formed in a same conductive type as the first semiconductor region, and supplies a carrier to the first semiconductor region when the MOS capacitor is charged and discharged, wherein the second semiconductor region extends equally in a depth direction as the first semiconductor region.