US 11,837,657 B2
Gate trench power semiconductor devices having improved deep shield connection patterns
Naeem Islam, Morrisville, NC (US); Woongsun Kim, Cary, NC (US); Daniel J. Lichtenwalner, Raleigh, NC (US); and Sei-Hyung Ryu, Cary, NC (US)
Assigned to Wolfspeed, Inc., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on Feb. 15, 2023, as Appl. No. 18/109,933.
Application 18/109,933 is a continuation of application No. 17/082,647, filed on Oct. 28, 2020, granted, now 11,610,991.
Prior Publication US 2023/0207686 A1, Jun. 29, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01)
CPC H01L 29/7813 (2013.01) [H01L 29/1608 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A power semiconductor device comprising:
a semiconductor layer structure comprising a drift region that comprises a wide band-gap semiconductor material having a first conductivity type;
a plurality of gate trenches in an upper portion of the semiconductor layer structure, each gate trench having a longitudinal axis that extends in a first direction and comprising first and second opposed sidewalls that each extend in the first direction;
a plurality of source trenches in an upper portion of the semiconductor layer structure, each source trench having a longitudinal axis that extends in a second direction that is different from the first direction and comprising first and second opposed sidewalls that each extend in the second direction; and
a plurality of deep shielding regions having the second conductivity type in the semiconductor layer structure underneath the respective source trenches.