US 11,837,636 B2
Semiconductor module and method for manufacturing the same
Dae Hwan Chun, Suwon-si (KR); Junghee Park, Suwon-si (KR); Jungyeop Hong, Seoul (KR); Youngkyun Jung, Seoul (KR); and NackYong Joo, Suwon-si (KR)
Assigned to Hyundai Motor Company, Seoul (KR); and Kia Corporation, Seoul (KR)
Filed by Hyundai Motor Company, Seoul (KR); and Kia Corporation, Seoul (KR)
Filed on Dec. 7, 2021, as Appl. No. 17/544,193.
Claims priority of application No. 10-2021-0091660 (KR), filed on Jul. 13, 2021.
Prior Publication US 2023/0016808 A1, Jan. 19, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 29/267 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/267 (2013.01) [H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02494 (2013.01); H01L 29/06 (2013.01); H01L 29/7869 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor module comprising:
a substrate;
a heterogeneous thin film comprising a first semiconductor layer disposed on a first region of the substrate and a second semiconductor layer disposed on a second region of the substrate;
a first semiconductor device disposed at a surface of the first semiconductor layer of the heterogeneous thin film; and
a second semiconductor device disposed at a surface of the second semiconductor layer of the heterogeneous thin film;
wherein one of the first semiconductor layer or the second semiconductor layer comprises gallium oxide (Ga2O3) and the other includes silicon (Si); and
wherein one of the first semiconductor layer or the second semiconductor layer is disposed in a peripheral region on the substrate and the other one of the first semiconductor layer or the second semiconductor layer is disposed in an inner region surrounded by the peripheral region.