| CPC H01L 27/14614 (2013.01) [H01L 24/08 (2013.01); H01L 27/1462 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01); H01L 2224/08145 (2013.01)] | 20 Claims |
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1. An image sensor, comprising:
a first substrate having a first surface and a second surface, which are opposite to each other, the first substrate comprising unit pixel regions and impurity regions, the impurity regions being adjacent to the first surface,
a device isolation pattern provided on the first surface of the first substrate to define the impurity regions; and
a first interconnection layer covering the first surface of the first substrate, the first interconnection layer comprising a first insulating layer covering the first surface of the first substrate, interconnection lines on the first insulating layer, and a first penetration structure penetrating the first insulating layer,
wherein the first penetration structure comprises:
a first pattern, which is connected to one of the impurity regions of the first substrate and is in contact with at least a portion of the device isolation pattern;
a second pattern, which is provided on the first pattern and is in contact with the interconnection lines; and
a third pattern provided between the first pattern and the second pattern,
wherein a top surface of the first pattern is provided at a level higher than a top surface of the device isolation pattern,
wherein a first side surface and a bottom surface of the first pattern is in physical contact with the device isolation pattern, and
wherein a second side surface and the bottom surface of the first pattern is in physical contact with the impurity region.
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