US 11,837,472 B2
Diamond semiconductor system and method
Adam Khan, San Francisco, CA (US)
Assigned to AKHAN SEMICONDUCTOR, INC., Gurnee, IL (US)
Filed by AKHAN Semiconductor, Inc., Gurnee, IL (US)
Filed on Aug. 24, 2021, as Appl. No. 17/410,427.
Application 17/410,427 is a continuation of application No. 16/773,891, filed on Jan. 27, 2020, granted, now 11,107,684.
Application 16/773,891 is a continuation of application No. 15/406,546, filed on Jan. 13, 2017, granted, now 10,546,749.
Application 15/406,546 is a continuation of application No. 14/615,311, filed on Feb. 5, 2015, abandoned.
Application 14/615,311 is a continuation of application No. 13/734,986, filed on Jan. 6, 2013, abandoned.
Claims priority of provisional application 61/583,841, filed on Jan. 6, 2012.
Prior Publication US 2021/0384032 A1, Dec. 9, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/868 (2006.01); H01L 21/02 (2006.01); H01L 33/34 (2010.01); H01L 21/3065 (2006.01); H01L 31/028 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 33/00 (2010.01); H01L 29/778 (2006.01)
CPC H01L 21/0415 (2013.01) [H01L 21/0237 (2013.01); H01L 21/0262 (2013.01); H01L 21/02085 (2013.01); H01L 21/02381 (2013.01); H01L 21/02444 (2013.01); H01L 21/02488 (2013.01); H01L 21/02527 (2013.01); H01L 21/02576 (2013.01); H01L 21/043 (2013.01); H01L 21/3065 (2013.01); H01L 29/06 (2013.01); H01L 29/1602 (2013.01); H01L 29/6603 (2013.01); H01L 29/66045 (2013.01); H01L 29/78 (2013.01); H01L 29/868 (2013.01); H01L 31/028 (2013.01); H01L 33/34 (2013.01); H01L 21/02573 (2013.01); H01L 29/1606 (2013.01); H01L 29/7781 (2013.01); H01L 33/005 (2013.01); Y02E 10/547 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of fabricating diamond films, the method including the steps of:
seeding a surface of silicon dioxide substrate material;
depositing a low temperature diamond layer upon the surface of the substrate material; and
modifying the low temperature diamond layer by including non-carbon atoms to create at least two layers having differing substitutional atoms.