	US 11,837,471 B2
	Methods of patterning small features
Katie Lutker-Lee, Albany, NY (US); Jake Kaminsky, Albany, NY (US); Yu-Hao Tsai, Albany, NY (US); Angelique Raley, Albany, NY (US); and Mingmei Wang, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Dec. 10, 2020, as Appl. No. 17/118,107.
Claims priority of provisional application 62/949,253, filed on Dec. 17, 2019.
Prior Publication US 2021/0183656 A1, Jun. 17, 2021
Int. Cl. H01L 21/033 (2006.01); H01L 21/027 (2006.01); G03F 7/20 (2006.01)

CPC H01L 21/0338 (2013.01) [H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); G03F 7/2004 (2013.01)]

18 Claims

1. A method of forming a semiconductor device, the method comprising:

depositing a first layer over a substrate comprising an underlying layer;

patterning the first layer using an extreme ultraviolet (EUV) lithography process to form a patterned layer and expose portions of the substrate;

in a plasma processing chamber, generating a first plasma from a gas mixture comprising SiCl₄and one or more of argon, helium, nitrogen, and hydrogen; and

exposing the substrate to the first plasma to deposit a second layer comprising silicon over the patterned layer;

performing a trim process to remove portions of the second layer;

after performing the trim process, in the plasma processing chamber, generating a second plasma from a gas mixture comprising SiCl₄and one or more of argon, helium, nitrogen, and hydrogen; and

exposing the substrate to the second plasma to deposit a third layer comprising silicon over the patterned layer.

8. A method of forming a semiconductor device, the method comprising:

depositing a first layer over a substrate;

patterning the first layer using an extreme ultraviolet (EUV) lithography process to form a patterned layer and expose portions of the substrate, the patterned layer comprising a top surface and sidewalls;

using a first plasma process comprising SiCl4, performing a first deposition process to deposit a second layer over the top surface and the sidewalls of the patterned layer and the exposed portions of the substrate, the second layer comprising silicon;

using a second plasma process, performing a first trim process to remove portions of the second layer to expose the portions of the substrate, the top surface and the sidewalls of the patterned layer remaining covered by the second layer;

after performing the first trim process, performing a second deposition process using the first plasma process comprising SiCl4 to deposit another second layer over the remaining portions of the second layer and the patterned layer and the exposed portions of the substrate;

using the second plasma process, performing a second trim process to remove portions of the another second layer to expose the portions of the substrate; and

after performing the second trim process, using the remaining portions of the second layer as an etch mask, etching the substrate to form a patterned feature.

16. A method of forming a semiconductor device, the method comprising:

depositing a first layer over a substrate;

depositing a middle layer over the patterned layer;

trimming the middle layer;

using a first plasma process comprising SiCl4, selectively depositing a second layer over the trimmed middle layer; and

using the second layer, the trimmed middle layer, and the patterned layer as an etch mask, etching the substrate to form a patterned feature.