US 11,837,470 B2
Method of fabrication and control of nano-structure array by angle-resolved exposure in proximity-field nano patterning
Jisun Lee, Suwon-si (KR); Seokwoo Jeon, Daejeon (KR); and Sanghyun Nam, Daejeon (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR); and KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, Daejeon (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 13, 2021, as Appl. No. 17/229,478.
Claims priority of application No. 10-2020-0048876 (KR), filed on Apr. 22, 2020.
Prior Publication US 2021/0335601 A1, Oct. 28, 2021
Int. Cl. H01L 21/027 (2006.01); G03F 1/26 (2012.01); G03F 7/20 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01)
CPC H01L 21/0275 (2013.01) [G03F 1/26 (2013.01); G03F 7/201 (2013.01); H01L 21/02603 (2013.01); H01L 21/02642 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66742 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method for fabricating a nano-structure, the method comprising:
providing a phase mask having an uneven lattice structure to contact a photoresist film;
exposing the photoresist film to a light through the phase mask such that the light is obliquely incident on a surface of the photoresist film; and
developing the photoresist film to form a nano-structure,
wherein an incidence angle of the light on the photoresist film satisfies the following formula:

OG Complex Work Unit Math
where ni is a refractive index of the phase mask, npr is a refractive index of the photoresist film, λ is a wavelength of the light in vacuum, P is a period of the uneven lattice structure, and θi is the incidence angle of the light on the photoresist film.