US 11,837,469 B2
Imprint apparatus, imprint method, and method of manufacturing semiconductor device
Kazuya Fukuhara, Tokyo (JP); Tetsuro Nakasugi, Kanagawa (JP); and Masayuki Hatano, Kanagawa (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Apr. 7, 2021, as Appl. No. 17/224,472.
Application 17/224,472 is a division of application No. 16/107,873, filed on Aug. 21, 2018, granted, now 11,004,683.
Claims priority of application No. 2018-004444 (JP), filed on Jan. 15, 2018.
Prior Publication US 2021/0225638 A1, Jul. 22, 2021
Int. Cl. H01L 21/027 (2006.01); G03F 7/00 (2006.01)
CPC H01L 21/0271 (2013.01) [G03F 7/0002 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of imprinting a pattern into a resist on a substrate, comprising:
preparing a substrate onto which a resist is applied in at least a shot region thereof;
pressing a template having a pattern thereon into the resist to form a pattern in the resist, the pattern on the template including a dense pattern region and a sparse pattern region;
performing a first irradiation of the resist on the substrate through the template with a first light to partially cure portions of the resist, the irradiation distribution of the first light during the first irradiation being different in different regions of the shot region; and
performing a second irradiation of the resist on the substrate through the template with a second light after irradiation of the resist on the substrate with the first light, wherein
in the first irradiation, a first portion of the resist in an outer edge portion of the shot region and a second portion of the resist in the dense pattern region in a central portion of the shot region is irradiated with the first light passing through the template but a third portion of the resist in the central portion of the shot region including the sparse pattern region is not irradiated with the first light because a portion of the central portion of the template is blocked from the first light,
in the second irradiation, the resist in the entire shot region is irradiated with the second light,
the first portion of the resist at the outer edge portion of the shot region is in a semi-cured state after the first irradiation, and
the resist in the entire shot region is fully cured by the second irradiation.